物料参数
| Number of channels: | 1 |
| Isolation rating: | Basic, Reinforced |
| Withstand isolation voltage (VISO) (Vrms): | 3000, 5000 |
| Working isolation voltage (VIOWM) (Vrms): | 990, 2121 |
| Transient isolation voltage (VIOTM) (VPK): | 4242, 7000 |
| Power switch: | IGBT, MOSFET, SiCFET |
| Peak output current (A): | 2.2 |
| Features: | Active miller clamp |
| Output VCC/VDD (max) (V): | 33 |
| Output VCC/VDD (min) (V): | 13.2 |
| Input supply voltage (min) (V): | 3 |
| Input supply voltage (max) (V): | 15 |
| Propagation delay time (µs): | 0.06 |
| Input threshold: | CMOS |
| Operating temperature range (°C): | -40 to 125 |
| Rating: | Catalog |
| Bootstrap supply voltage (max) (V): | 2121 |
| Rise time (ns): | 12 |
| Fall time (ns): | 10 |
| Undervoltage lockout (typ) (V): | 12 |
| Number of channels: | 1 |
| Isolation rating: | Basic, Reinforced |
| Withstand isolation voltage (VISO) (Vrms): | 3000, 5000 |
| Working isolation voltage (VIOWM) (Vrms): | 990, 2121 |
| Transient isolation voltage (VIOTM) (VPK): | 4242, 7000 |
| Power switch: | IGBT, MOSFET, SiCFET |
| Peak output current (A): | 2.2 |
| Features: | Active miller clamp |
| Output VCC/VDD (max) (V): | 33 |
| Output VCC/VDD (min) (V): | 13.2 |
| Input supply voltage (min) (V): | 3 |
| Input supply voltage (max) (V): | 15 |
| Propagation delay time (µs): | 0.06 |
| Input threshold: | CMOS |
| Operating temperature range (°C): | -40 to 125 |
| Rating: | Catalog |
| Bootstrap supply voltage (max) (V): | 2121 |
| Rise time (ns): | 12 |
| Fall time (ns): | 10 |
| Undervoltage lockout (typ) (V): | 12 |
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